Ashburn, P., Mubarek, H. A. W. E., Bonar, J. M. and Redman-White, W. (2001) SiGe heterojunction bipolar transistors on insulator. In: Electrochemical Society Spring Meeting: Tenth International Symposium on Silicon On Insulator Technology and Devices, March 2001, Washington USA. pp. 433-444. Full text not available from this repository.
Abstract
This paper reviews progress in SiGe heterojunction bipolar technology and considers the prospects for SiGe HBT on insulator technology. The three approaches commonly used to produce SiGe HBTs are described and compared, namely the drift SiGe base, the SiGe base with a low doped emitter and the selective SiGe base. Methods for suppressing or avoiding transient enhanced boron diffusion are discussed, especially the use of carbon in the SiGe base. Finally, work on SiGe heterojunction bipolar transistors on SOI at Southampton University is reviewed.
| Item Type: | Conference or Workshop Item | ||||||||
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| Research Group: | ?? group-nsi ?? Current ECS Groups > Nano Group | ||||||||
| ISBN: | 1-56677-309-1 | ||||||||
| Date: | March 2001 | ||||||||
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| Performance Indicator: | EZ~04~04~04 | ||||||||
| Citations: | Google Scholar: 2 | ||||||||
| ID Code: | 4722 | ||||||||
| Last Modified: | 23 Sep 2011 10:26 | ||||||||
| Deposited On: | 05 Jan 2004 by Ashburn, Peter | ||||||||
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