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Items from Current ECS Groups > Nano Group in 1985
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Group by: No Grouping | Item Type | Creator/Authors Name
Number of items: 17.

Amaratunga, G. A. J., Knee, N., Hart, M. J. and Evans, A. G. R. (1985) Implantation and diffusion models for arsenic.

Amaratunga, G. A. J., Sabine, K. A. and Evans, A. G. R. (1985) Modelling of ion implantation in a three layer structures using the method of dose matching.

Chor, E. F., Ashburn, P. and Brunnschweiler, A. (1985) Emitter resistance of arsenic and phosphorus doped polysilicon emitter transistors.

Cuthbertson, A. and Ashburn, P. (1985) An investigation of the trade-off between gain and base doping in polysilicon emitter bipolar transistors.

Cuthbertson, A. and Ashburn, P. (1985) Self-aligned transistors with polysilicon emitters for bipolar VLSI.

Frenc, P. J. and Evans, A. G. R. (1985) Polysilicon as a strain gauge material.

Frenc, P. J. and Evans, A. G. R. (1985) Polysilicon as a strain gauge material.

French, P. J. and Evans, A. G. R. (1985) Polycrystalline Silicon Strain Sensors.

French, P. J. and Evans, A. G. R. (1985) Polycrystalline Silicon Strain Sensors.

Hart, M. J., Amaratunga, G. A. J. and Evans, A. G. R. (1985) Rapid thermal annealing using a > dual-pulse=scanning electron beam annealing technique.

Hart, M. J. and Evans, A. G. R. (1985) A Scanning Electron Beam Annealer with Electrostatic Deflection Systems.

Jesshope, C. R. and Ashburn, P. (1985) An 12L clocked gate array for undergraduate design exercises.

Jorgensen, N., Barry, J. C., Booker, G. R., Ashburn, P., Wolstenholme, G. R., Wilson, M. C. and Hunt, P. C. (1985) TEM investigation of the effect of anneal temperature and arsenic concentration on the polysilicon/thin oxide/single-crystal silicon emitter of a new high-performance bipolar transistor.

Kotani, A., Mizuta, H., Jo, T. and Parlebas, J. C. (1985) Theory of core photoemission spectra in CeO2. Solid State Communications, 53 . pp. 805-810.

Mizuta, H. and Kotani, A. (1985) Theory of spin-polarized Auger electrons from ferromagnetic materials. Journal od the Physical Society of Japan, 54 . pp. 4452-4461.

Sabine, K. A., Amaratunga, G. A. J. and Evans, A. G. R. (1985) Threshold shift of NMOS transistors due to high energy source/drain implantation.

Takita, K., Uchino, T., Ipposhi, T. and Masuda, K. (1985) LPE crystal growth and magnetophonon resonance recombination of Hg1-xMnxTe. Solid State Commun., 56 . p. 603.

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