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Items from Current ECS Groups > Nano Group in 1986
(Grouped by Creator/Authors Name)

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Group by: No Grouping | Item Type | Creator/Authors Name
Jump to: B | C | E | F | H | R | W
Number of items: 15.

B

Burgraaf, P., Parker, G. J. and Thompson, W. (1986) Focused Beam Implanter Trends.

Burgraaf, P., Parker, G. J. and Thompson, W. (1986) Focused Beam Implanter Trends.

C

Champ, P., Cowern, N. E. B., Godfrey, D. J., Willoughby, A. F. and Evans, A. G. R. (1986) A model for boron diffusion in p+, n+ and lightly doped silicon.

Curtis, A. R. D., Redman-White, W. and Nelson, P. A. (1986) The active control of flexural wave power flow in beams - theory. In: UNSPECIFIED.

E

Evans, A. G. R. and Farooqui, M. M. (1986) A Polysilicon Pressure Sensor.

Evans, A. G. R. and Farooqui, M. M. (1986) A polysilicon pressure sensor.

F

French, P. J. and Evans, A. G. R. (1986) Complete model of piezoresistance in polysilicon for strain gauge applications.

French, P. J. and Evans, A. G. R. (1986) The Effect of Deposition of Temperature on LPCVD Polysilicon.

French, P. J. and Evans, A. G. R. (1986) Polycrystalline silicon as a strain gauge material.

H

Hart, M. J., Evans, A. G. R. and Amaratunga, G. A. J. (1986) Non equilibrium effects during RTA of Boron and Arsenic implants in silicon.

Hart, M. J., Evans, A. G. R. and Amaratunga, G. A. J. (1986) Transient scanning electron beam annealing methods used to study diffusion and defects in implanted silicon.

Hart, M. J., Evans, A. G. R. and Amaratunga, G. A. J. (1986) Transient scanning electron beam annealing methods used to study diffusion and defects in implanted silicon.

R

Redman-White, W., Curtis, A. R. D. and Nelson, P. A. (1986) The active control of flexural wave power flow in breams - experimental investigations. In: UNSPECIFIED.

Resendiz-Rodriguez, F. and Evans, A. G. R. (1986) Voltage Discharge of Light Sensors in CCD Imaging Devices.

W

Willoughby, A. F. W., Evans, A. G. R., Champ, P., Yallop, K. J. and Godfrey, D. J. (1986) Diffusion of Boron in heavily doped n-and p-type silicon.

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