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Items from Current ECS Groups > Nano Group in 1987
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Number of items: 19.

Amaratunga, G. A. J., Knee, N. D., Hart, M. J. and Evans, A. G. R. (1987) Implantation dominated unction depths of low temperature and electron beam annealed As source/drain Regions.

Ashburn, P., Rezazadeh, A. A., Chor, E. F. and Brunnschweiler, A. (1987) Comparison of silicon bipolar and GaAs/GaAlAs heterojunction bipolar technologies for high-speed ECL circuits.

Ashburn, P., Roulston, D. J. and Selvakumar, C. R. (1987) Comparison of experimental and computed results on arsenic and phosphorus doped polysilicon emitter bipolar transistors.

Evans, A. and Hall, W. (1987) Programming Inequality.

Farooqui, M. M. and Evans, A. G. R. (1987) A polysilicon diaphragm based pressure sensor technology.

French, P. J. and Evans, A. G. R. (1987) Polysilicon strain sensors using shear piezoresistance.

Hall, A. M. and Redman-White, W. (1987) A quartz crystal oscillator with current controlled frequency trimming. IEEE Transactions on Circuits and Systems , CAS-34 (9). 1132 - 1133. ISSN 0098-4094

Hart, M. J., Evans, A. G. R., Altrip, J. L. and Amaratunga, G. A. J. (1987) Diffusion, clustering and defect assessment of CMOS source drain regions after e-beam annealing.

Hart, M. J., Evans, A. G. R., Amaratunga, G. A. J. and Altrip, J. L. (1987) A study of diffusion, clustering and defects in As+ and BF2+ implanted silicon during scanning electron beam annealing.

Hart, M. J., Evans, A. G. R., Amaratunga, G. A. J. and Altrip, J. L. (1987) A study of diffusion, clustering and defects in As+ and BF2+ implanted silicon during scanning electron beam annealing.

Hart, M. J., Evans, A. G. R., Amaratunga, G. A. J., Altrip, J. L. and Kijek, M. (1987) Diffusion measurements and modelling of arsenic in silicon after scanning electron beam annealing.

Hart, M. J., Evans, A. G. R. and Bartlett, N. K. (1987) A Dual Pulse Scanning Electron-Beam annealer.

Mizuta, H., Yamaguchi, K. and Takahashi, S. (1987) Surface Potential Effect on Gate-Drain Avalanche Breakdown in GaAs MESFET's. IEEE Transactions on Electron Devices, ED-34 . pp. 2027-2033.

Redman-White, W., Nelson, P. A. and Curtia, A. R. D. (1987) Experiments on the active control of flexural wave power flow. J Sound & Vibration, 112 (1). 187 - 191.

Takita, K., Akinaga, H., Katoh, H., Uchino, T., Ishigaki, T. and Asano, H. (1987) Anisotropic upper critical fields of orthorhombic single phase YBa2Cu3O7-d studied using preferentially oriented pellets. Jpn. J. Appl. Phys., 26 . L1323.

Takita, K., Ipposhi, T., Uchino, T., Gochou, T. and Masuda, K. (1987) Superconductivity transition in high-Tc Y-Ba-Cu-O mixed-phase system. Jpn. J. Appl. Phys., 26 . L506.

Takita, K., Uchino, T., Gochou, T. and Masuda, K. (1987) Magnetophonon resonance recombination with emission of two TA-phonons and impurity state in LPE- Hg1-xMnxTe. Solid State Commun., 61 . p. 535.

Wolstenholme, G., Jorgensen, N., Ashburn, P. and Booker, G. R. (1987) An investigation of the thermal stability of the interfacial oxide in polysilicon emitter bipolar transistors using high resolution TEM.

Yanokura, E., Mizuta, H., Mori, M. and Takahashi, S. (1987) GaAs MESFET's fabricated by new self-alignment technology. In: 19th Conference on Solid State Devices and Materials, August 1987, Tokyo. pp 263-266.

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