Items from Current ECS Groups > Nano Group in 1988
(Grouped by Creator/Authors Name)

A

Altrip, J. L., Evans, A. G. R., Hart, M. J., Amaratunga, G. A. J. and Kijek, M. (1988) Diffusion and activation studies of rapid thermally annealed arsenic implanted silicon.

Ashburn, P., Rezazadeh, A. A., Chor, E. F. and Brunnschweiler, A. (1988) Use of a gate delay expression to compare self-aligned silicon bipolar and AlGaAs/GaAs heterojunction bipolar technologies.

C

Carter, J. C., Blackburn, A. and Evans, A. G. R. (1988) Evaluation of damage to MOS devices fabricated on dry etched substrates.

Castaner, L., Ashburn, P., Prat, L. and Wolstenholme, G. (1988) The asymptotes of the base current in bipolar devices.

Chor, E. F., Brunnschweiler, A. and Ashburn, P. (1988) A gate delay expression for the optimisation of ECL processes.

E

Ensell, G., Holmes-Siedle, A. and Adams, L. (1988) Thick oxide pMOSFET dosimeters for high energy radiation. Nuclear Instruments and Methods in Physics Research, A269 . pp. 655-658.

Evans, A. and Hall, W. (1988) Gender Inequality and Computer Education. NUT Education Review, 1 (3). pp. 45-51.

F

Farooqui, M. M. and Evans, A. G. R. (1988) Polysilicon capacitative pressure sensors.

Farooqui, M. M., Roberts, P. T. E. and Evans, A. G. R. (1988) Polysilicon diaphragms for sensor applications.

French, P. J. and Evans, A. G. R. (1988) Peizoresistance in single crystal and polycrystalline silicon.

French, P. J. and Evans, A. G. R. (1988) Polysilicon strain sensors using shear piezoresistance.

H

Hart, M. J. and Evans, A. G. R. (1988) Rapid thermal processing in semiconductor technology.

Hasko, D. G., Potts, A., Cleaver, J. R. A., Smith, C. G. and Ahmed, H. (1988) Fabrication of submicrometer free-standing single-crystal gallium arsenide and silicon. Journal of Vacuum Science and Technology B, 6 (6). pp. 1849-1851. ISSN 1071-1023

Hiruma, K., Yanakura, E., Mori, M., Mizuta, H. and Takahashi, S. (1988) High performance GaAs hetero-buffered MESFET's grown by 2 growth zone. In: 15th International Symposium on Gallium Arsenide and Related Compounds, September 1988, Atlanta.

K

Kusano, C., Tanoue, T., Mizuta, H. and Takahashi, S. (1988) Multiple-valued logic applications of a triple-well resonant tunneling diode. In: Device Research Conference, May 1988.

Kusano, C., Tanoue, T., Mizuta, H. and Takahashi, S. (1988) Multiple-valued logic application of a triple-well resonant tunneling diode. IEEE Transactions on Electron Devices, ED-35 . pp. 2453.

M

Mizuta, H., Tanoue, T. and Takahashi, S. (1988) A new triple-well resonant tunneling diode with controllable double-negative resistance. IEEE Transactions on Electrons Devices, ED-35 . pp. 1951-1956.

N

Nanu, L. and Evans, A. G. R. (1988) Model for Phosphorus diffusion in silicon during rapid thermal annealing.

P

Parker, G. J. (1988) Report on Integration Techniques for Compound Semiconductors.

Potts, A., Hasko, D. G., Cleaver, J. R. A. and Ahmed, H. (1988) Fabrication of free-standing single-crystal silicon wires. Applied Physics Letters, 52 (10). pp. 834-835. ISSN 0003-6951

R

redman-White, W., Dunn, T. R., Lucas, D. R. and Winchcombe, S. A. (1988) A radiation hard frequency reference IC. IEEE Trans Nuclear Science, 35 . 1368 - 1372.

Redman-White, W., Dunn, T. R., Lucas, D. R. and Winchcombe, S. A. (1988) A radiation hard frequency reference IC. In: UNSPECIFIED.

T

Tanoue, T., Mizuta, H. and Takahashi, S. (1988) Double negative resistance properties of a triple-well resonant tunneling diode. In: Advanced Heterostructure Device Workshop Hawaii, December 1988, Hawaii.

Tanoue, T., Mizuta, H. and Takahashi, S. (1988) A Triple-well resonant tunneling diode for multiple-valued logic application. IEEE Transactions on Electron Devices, EDL-9 . pp. 265-367.

W

Wolstenholme, G. R., Ashburn, P., Jorgensen, N., Gold, D. and RBooker, G. (1988) Measurement and modelling of the emitter resistance of polysilicon emitter bipolar transistors.

Wolstenholme, G. R., Browne, D. C., Ashburn, P. and Landsberg, P. T. (1988) An investigation of the transition from polysilicon emitter to SIS emitter behaviour.