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Items from Current ECS Groups > Nano Group in 1990
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Number of items: 35.

Altrip, J. L., Evans, A. G. R., Logan, J. R. and Jeynes, C. (1990) Towards the limit of Ion Implantation and rapid thermal annealing as a technique for shallow junction formation.

Atrip, J. L., Evans, A. G. R., Logan, J. R. and Jeynes, C. (1990) High temperature millisecond annealing of arsenic implanted silicon.

Biswas, R., Amaratunga, G. A. J., Evans, A. G. R. and Roberts, P. T. E. (1990) Parallel Computational techniques for simulating the coupled diffusion of impurities in silicon.

Biswas, R., Amaratunga, G. A. J., Evans, A. G. R. and Roberts, P. T. E. (1990) Parallel Computational techniquess for simulating the coupled diffusion of impurities and defects in silicon.

Brown, A. D., Zwolinski, M. and Redman-White, W. (1990) Mixed mode simulation of oversampled A/D converters. In: UNSPECIFIED.

Brown, A. D., Zwolinski, M. and Redman-White, W. (1990) Mixed mode simulation of oversampled A/D converters. In: UNSPECIFIED.

Fang, W., Brunnschweiler, A. and Ashburn, P. (1990) An analytical maximum toggle frequency expression and its application to optimising high-speed ECL frequency dividers.

Farooqui, M. M., Leong, D. and Evans, A. G. R. (1990) Silicon cantilevers with integral tips for atomic force microscopy.

Goodings, C. J., Mizuta, H., Ochiai, Y., Cleaver, J. R. A. and Ahmed, H. (1990) Fabrication of lateral superlattices on GaAs/AlGaAs heterostructures by gas-assisted focused ion beam etching. In: Symposium on Nanostructures: Fabrication and physics, 1990 Fall Meeting of Materials Research Society, 1990, Boston.

Howes, R., Redman-White, W., Nicols, K. G., Murray, S. J., Lucas, R. and Mole, P. J. (1990) Device modelling and design techniques fdor analogue SOS circuits. In: UNSPECIFIED.

Howes, R., Redman-White, W., Nicols, K. G., Murray, S. J. and Mole, P. J. (1990) Modelling and simulation of silicon on Sapphire MOSFETs for analogue circuit design. In: UNSPECIFIED.

Leong, K. H., Ensell, G., Wall, P. and Pickard, R. S. (1990) Multichannel microelectrode probes machined in silicon.

Murray, D. C., Carter, J. C. and Evans, A. G. R. (1990) CMOS 1/f noise: n-channel versus p-channel.

Murray, D. C., Evans, A. G. R., Atrip, J. L. and Carter, J. C. (1990) The effects of RTA on CMOS devices.

Parker, D. G. J., Shafi, Z. A. and Ashburn, P. (1990) Predicted propagation delay on Si/Si:Ge heterojunction bipolar circuits.

Parker, D. G. J. and Starbuck, C. M. K. (1990) Selective silicon epitaxial growth by LPCVD using silane.

Parker, G. J. (1990) Thick Selective Silicon Epitaxial Growth by LPCVD from Pure Silane.

Pickard, R. S., Wall, P., Ubeid, M., Ensell, G. and Leong, K. H. (1990) Recording neural activity in the honeybee brain with micromachined silicon sensors.

Post, I. R. C. and Ashburn, P. (1990) Electrical method for measuring the emitter depth of shallow bipolar transistors.

Potts, A., Hasko, D. G., Cleaver, J. R. A., Smith, C. G., Ahmed, H., Kelly, M. J., Frost, J. E. F., Jones, G. A. C., Peacock, D. C. and Ritchie, D. A. (1990) Quantum conductivity corrections in free-standing and supported n<SUP>+</SUP> GaAs wires. Journal of Physics: Condensed Matter, 2 (7). pp. 1807-1815. ISSN 0953-8984

Potts, A., Kelly, M. J., Smith, C. G., Hasko, D. G., Cleaver, J. R. A., Ahmed, H., Peacock, D. C., Ritchie, D. A., Frost, J. E. F. and Jones, G. A. C. (1990) Electron heating effects in free-standing single-crystal GaAs fine wires. Journal of Physics: Condensed Matter, 2 (7). pp. 1817-1825. ISSN 0953-8984

Potts, A., Kelly, M. J., Smith, C. G., Hasko, D. G., Cleaver, J. R. A., Ahmed, H., Peacock, D. C., Ritchie, D. A., Frost, J. E. F. and Jones, G. A. C. (1990) Thermal transport in free-standing single-crystal GaAs wires. In: Microelectronic Engineering 89, 26-28 September 1989, Cambridge UK. pp. 15-18.

Potts, A., Williams, D. A., Young, R. J., Blaikie, R. J., McMahon, R. A., Hasko, D. G., Cleaver, J. R. A. and Ahmed, H. (1990) Fabrication of free-standing single-crystal silicon nanostructures for the study of thermal transport and defect scattering in low dimensional systems. Japanese Journal of Applied Physics Part 1, 29 (11). pp. 2675-2679. ISSN 0021-4922

Redman-White, W., Dunn, R., Lucas, R. and Smithers, P. (1990) A radiation hard AGC stabilised SOS crystal oscillator. IEEE J Solid State Circuits, 25 (1). 282 - 288.

Roulston, D. J., Gold, D. P., Ashburn, P. and Booker, G. R. (1990) Study of thin oxide tunnel parameters for polysilicon emitters using computer simulation and experimental results.

Shafi, Z. A. and Ashburn, P. (1990) Silicon based pseudo-heterojunction bipolar transistors.

Shafi, Z. A., Ashburn, P. and Parker, G. J. (1990) Predicted propagation delay of Si'SiGe heterojunction bipolar ECL circuits.

Siabi-Shahrirvar, N., Redman-White, W., Ashburn, P. and Post, I. (1990) Low frequency noise of NPN/PNP polysilicon emitter bipolar transistors. In: UNSPECIFIED.

Siabi-Shahrivar, N., Redman-White, W., Ashburn, P. and Post, I. (1990) Low frequency noise performance of NPN/PNP polysilicon emitter bipolar transistors. In: UNSPECIFIED.

Siabi-Shahrivar, N., Redman-White, W., Ashburn, P. and Post, I. (1990) Modelling and characterisation of noise of polysilicon emitter bipolar transistors.

Siabi-Shahrivar, N., Redman-White, W., Ashburn, P. and Post, I. (1990) Modelling and characterisation of noise of polysilicon emitter bipolar transistors. In: UNSPECIFIED.

Takita, K., Uchino, T. and Masuda, K. (1990) LPE crystal growth and magnetophonon resonance recombination of Hg1-x-yCdxMnyTe. Semicond. Sci. Technol., 5 . S277.

Tanoue, T. and Mizuta, H. (1990) Multiple-well RTD with InGaAs strained quantum wells. In: Advanced Heterostructure Device Workshop, December 1990, Hawaii.

Usagawa, T., Rabinzohn, P. D., Mizuta, H., Hiruma, K., Kawata, M. and Yamaguchi, K. (1990) Comprehensive analysis of bifunctional 2DEG-HBTs. In: 22nd Conference on Solid State Devices and Materials, August 1990, Sendai. pp 59-62.

Williams, J. D., Ashburn, P., Moisewitsch, N. E., Gold, D. P., Whitehurst, J., Booker, G. R. and Wolstenholme, G. R. (1990) Epitaxial regrowth in double-diffused polysilicon emitters.

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