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Items from Current ECS Groups > Nano Group in 1991
(Grouped by Item Type)

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Group by: No Grouping | Item Type | Creator/Authors Name
Number of items: 41.

Article

Howes, R. and Redman-White, W. (1991) Measurement and analysis of small-signal drain admittance in SOS MOSFETs. Electronics Letters, 27 (24). pp. 2290-2292.

Mizuta, H. and Goodings, C. J. (1991) Transient quantum transport simulation based on the statistical density matrix. Journal of Physics: Condensed Matter, 3 . pp. 3739-3756.

Nanba, M., Kobayashi, T., Uchino, T., Nakamura, T., Kondo, M., Tamaki, Y., Iijima, S., Kure, T. and Tanabe, M. (1991) A 64 GHz Si bipolar transistor using in-situ phosphorus doped polysilicon emitter technology. IEDM Tech. Digest . p. 443.

Potts, A., Kelly, M. J., Hasko, D. G., Smith, C. G., Cleaver, J. R. A., Ahmed, H., Peacock, D. C., Frost, J. E. F., Ritchie, D. A., Jones, G. A. C., Singleton, J. and Janssen, T. J. B. M. (1991) Thermal transport in free-standing semiconductor fine wires. Superlattices and Microstructures, 9 (3). pp. 315-318. ISSN 1096-3677

Rabinzohn, P. D., Usagawa, T., Mizuta, H. and Yamaguchi, K. (1991) The new two-dimensional electron gas base HBT (2DEG-HBT): Two-dimensional numerical simulation. IEEE Transactions on Electron Devices, ED-38 . pp. 222-231.

Conference or Workshop Item

Durham, A. M., Redman-White, W. and Hughes, J. B. (1991) Digitally tunable continuous-time filters with high signal linearity. In: UNSPECIFIED.

Durham, A. M., Redman-White, W. and Hughes, J. B. (1991) Low distortion VLSI compatible self-tuned continuous time monolithic filters. In: UNSPECIFIED.

Ho, S., Mizuta, H. and Yamaguchi, K. (1991) Effects of reservoirs on tunneling and interference in mesoscopic systems. In: Condensed Matter and Material Physics Conference 1991, December 1991, Birmingham.

Howes, R. and Redman-White, W. (1991) Frequency dependent small-signal drain characteristics in silcon-on-sapphire MOSFETs. In: UNSPECIFIED.

Howes, R., Redman-White, W., Nicols, K. G., Bird, S., Robinson, M. and Mole, P. J. (1991) A charge conserving SOS MOSFET model including radiation effects for circuit simulation. In: UNSPECIFIED.

Howes, R., Redman-White, W., Nicols, K. G., Murray, S., Robinson, M. and Mole, P. (1991) A charge conserving silicon-on-sapphire SPICE MOSFET model for analogue design. In: UNSPECIFIED.

Howes, R., Redman-White, W., Nicols, K. G., Robinson, M., Kerr, J. and Mole, P. J. (1991) A SOS MOSFET SPICE model for confident analogue design. In: UNSPECIFIED.

Mizuta, H. and Goodings, C. J. (1991) Density matrix calculations of femtosecond electron dynamics in resonant tunnelling diodes. In: 11th general conference of the condensed matter division of European Physical Society, April 1991, Exeter.

Mizuta, H. and Goodings, C. J. (1991) Transient quantum transport simulation based on the statistical density matrix. In: Institute of Physics semiconductor group meeting, June 1991, Sheffield.

Redman-White, W. and Durham, A. M. (1991) A fourth order converter with self-tuning continuous time noise shaper. In: UNSPECIFIED.

Siabi-Shahrivar, N., Kemhadjian, H. A., Redman-White, W., Ashburn, P. and Williams, J. D. (1991) The effects of scaling and rapid thermal annealing on the 1/f noise of polysilicon emitter bipolar transistors. In: UNSPECIFIED.

Book Section

Brown, A. D. and Redman-White, W. (1991) Bipolar analogue circuits. In: 80 - 98, McGraw-Hill,London.

Redman-White, W. (1991) CMOS analogue circuits. In: pp. 124-142, McGraw-Hill, London.

Other

Afshar-Hanaee, N., Bonar, J. M., Evans, A. G. R., Starbuck, C. M. K., Parker, G. J. and Kemhadjian, H. A. (1991) Thick selective epitaxial growth of silicon at 960 deg C using silane only.

Afshar-Nanaii, N., Bonar, J. M., Evans, A. G. R., Parker, G. J. and Starbuck, C. M. K. (1991) Thick selective expitaxial growth of silicon at 960oC using silane only.

Altrip, J. L., Evans, A. G. R., Young, N. D. and Logan, J. R. (1991) The nature of Electrically inactive implanted arsenic in Silicon after rapid thermal annealing.

Carter, J. C. and Evans, A. G. R. (1991) Delineation of junctions using secco and period etches.

Castaner, L. M., Ashburn, P. and Wolstenholme, G. R. (1991) Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors.

Evans, A. G. R. (1991) Design rules, verification and scaling.

Evans, A. G. R. (1991) MOS processes.

Farooqui, M. M. and Evans, A. G. R. (1991) Polysilicon Microstructures.

Farooqui, M. M. and Evans, A. G. R. (1991) Polysilicon Microstructures.

Farooqui, M. M., Evans, A. G. R., Stedman, M. and Haycocks, J. A. (1991) Cantilevers with integral tips for atomic force microscopy.

Farooqui, M. M., Evans, A. G. R., Stedman, M. and Haycocks, J. A. (1991) Micromachined sensors for atomic force microscopy.

Hockley, M., Tuppen, C. G., Gibbings, C. J., Shafi, Z. A. and Ashburn, P. (1991) TEM study of strain relaxation processes in metastable Si/SiGe/Si structures for heterojunction bipolar transistors.

Murray, D. C., Carter, J. C., Afshar-Hanaii, N., Evans, A. G. R., Taylor, S., Zhang, J. and Eccleson, W. (1991) Noise and other electrical characteristics of CMOSFETS fabricated with furnafe, anodic and rapid thermal oxides.

Murray, D. C., Evans, A. G. R. and Carter, J. C. (1991) Shallow defects responsible for G-R noise in MOSFETS.

Parker, G. J., Bonar, J. M. and Starbuck, C. M. K. (1991) Long incubation times for selective epitaxal growth of silicon using silane only.

Parker, G. J. and Starbuck, C. M. K. (1991) A New Semiconductor Depisition System.

Post, I. R. C. and Ashburn, P. (1991) Investigation of boron diffusion in polysilicon and its application to the design of pnp polysilicon emitter bipolar transistors with shallow emitter junctions.

Shafi, Z. A., Gibbings, C. J., Ashburn, P., Post, I. R. C., Tuppen, C. G. and Godfrey, D. J. (1991) The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors.

Shafi, Z. A., Martin, A. S. R., Ashburn, P., Godfrey, D. J., Gibbings, C., Post, I. R. C., Tuppen, C. and Jones, M. E. (1991) Thermal annealing of metastable and stable Si/SiGe heterojunction bipolar transistors.

Shafi, Z. A., Post, I. R. C., Whitehurst, J., Wensley, P., Ashburn, P., Moynagh, P. B. and Booker, G. R. (1991) Poly-crystalline silicon-carbide (SiCarb) emitter bipolar transistors.

Siabi-Shahrivar, N., Kemhadjian, H. A., Redman-White, W., Ashburn, P. and Williams, J. D. (1991) The effects of scaling and rapid thermal annealing on the l/f noise of polysilicon emitter bipolar transistors.

Starbuck, C. M. K. and Parker, G. J. (1991) A New Semiconductor Deposition System.

Tomlinson, R. D., Hill, A. E., Imaniah, M., Pilkington, R. D., Slifkin, M. and Bagnall, D. M. (1991) Changes in the opto-electronic properties of CuInSe2 following ion implantation.

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