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Items from Current ECS Groups > Nano Group in 1992
(Grouped by Creator/Authors Name)

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Group by: No Grouping | Item Type | Creator/Authors Name
Jump to: A | D | E | F | H | K | M | P | R | S | W | Y | Z
Number of items: 37.

A

Afshar-Hanaii, N., Bonar, J. M., Evans, A. G. R., Parker, E. H. C., Starbuck, C. M. K. and Kemhadjian, H. A. (1992) Thick selective epitaxial growth of silicon at 960oC using silane only.

Afshar-Nanaii, N., Evans, A. G. R. and Starbuck, C. M. K. (1992) Submicron CMOS devices utilising selective epitaxial (SEG) of silicon using silane only.

Altrip, J. L. and Evans, A. G. R. (1992) Anomalous Electrical deactivation of low concentration rapid thermally annealed arsenic implanted silicon.

D

Duram, A. M., Hughes, J. B. and Redman-White, W. (1992) Circuit architectures for high-linearity monolithic continuous-time filters. IEEE Trans on Circuits and Systems Part II, 39 (9). 651 - 657.

Durham, A. M. and Redman-White, W. (1992) Integrated continuous-time balanced filters for 16-bit DSP interfaces. In: UNSPECIFIED.

Durham, A. M. and Redman-White, W. (1992) Low-distrotion continuous-time integrated CMOS filters for the audio-DSP interface. In: UNSPECIFIED.

Durham, A. M., Redman-White, W. and Hughes, J. B. (1992) High linearity continuous-time filters in VLSI compatible CMOS. IEEE Journal of Solid State Circuits, 27 (9). 1270 - 1276.

Durham, A. M., Redman-White, W. and Hughes, J. B. (1992) Low distortion VLSI compatible self-tuned continuous time monolithic filters. In: pp. 333-336, IEEE Press, New York , Voorman and Tsividis.

E

Ensell, G., Evans, A. G. R., Farooqui, M., Stedman, M. and Haycocks, J. A. (1992) Nanometrological Micromachined Artefacts.

Ensell, G., Evans, A. G. R., Farooqui, M. M., Haycocks, J. A. and Stedman, M. (1992) Nanometrological Micromachined Artefacts.

F

Fang, W., Brunnschweiler, A. and Ashburn, P. (1992) An accurate analytical BiCMOS delay expression and its application to optimising high-speed BiCMOS circuits.

Farooqui, M. M. and Evans, A. G. R. (1992) Microfabrication of submicron nozzles in silicon nitride.

Farooqui, M. M. and Evans, A. G. R. (1992) A novel process for fabricating force sensors for atomic force microscopy.

Farooqui, M. M. and Evans, A. G. R. (1992) A novel process for fabricating force sensors for atomic force microscopy.

Farooqui, M. M., Evans, A. G. R., Stedman, M. and Haycocks, J. (1992) Micromachined silicon sensors for atomic force microscopy.

Flowers, M. C., Jonathan, N. B., Laurie, A. B., Morris, A. and Parker, G. J. (1992) New precursor for growing nitride films.

H

Howes, R. and Redman-?White, W. (1992) A small signal model for the frequency dependent drain admittance in floating substrate MOSFETs. IEEE Journal of Solid State Circuits, 27 (8). 1186 - 1193.

Howes, R., redman-White, W., Nicols, K. G., Murray, S. J. and Mole, P. J. (1992) A silicon on sapphire model for analogue circuit simulation. IEE Proceedings - G, 139 (1). 33 - 36.

K

Kelly, M. J., Potts, A., Hamilton, A., Tewordt, M., Pepper, M., Law, V. J., Frost, J. E. F., Ritchie, D. A., Jones, G. A. C., Hasko, D. G. and Ahmed, H. (1992) Quasi-one dimensional transport in semiconductor microstructures. Physica Scripta, T45 . pp. 200-205. ISSN 0281-1847

Kusano, C., Mizuta, H., Mochizuki, K. and Yamaguchi, K. (1992) Simulation of the effect of emitter doping on the delay time in AlGaAs/GaAs heterojunction bipolar transistors. Japanese Journal of Applied Physics, 31 . L1650-L1653.

M

Mizuta, H., Goodings, C., Wagner, M. and Ho, S. (1992) Quantum transport in laterally confined resonant tunnelling structures. In: Condensed Matter and Material Physics Conference 1992, December 1992, Sheffield.

Mizuta, H., Goodings, C. J., Wagner, M. and Ho, S. (1992) Three-dimensional numerical simulation of multi-mode quantum transport in zero-dimensional resonant tunneling diodes. Journal of Physics: Condensed Matter, 4 . pp. 8783-8800.

Mizuta, H., Wagner, M., Ho, S. and Yamaguchi, K. (1992) Three-dimensioal numerical simulation of multi-mode quantum transport in zero-dimensioanl resonant tunnelling diodes. In: 1st International Workshop on Quantum Functional Devices, May 1992, Nasu Heights.

P

Parker, G. J., Bonar, J. M. and Starbuck, C. M. K. (1992) Radiant heater assembly for limited reaction-rate processing applications.

Post, I. R. C. and Ashburn, P. (1992) The use of an interface anneal to control the base current and emitter resistance of pnp polysilicon emitter bipolar transistors.

Post, I. R. C., Ashburn, P. and Nouailhat, A. (1992) A heterojunction tunnelling model for pnl and npn polysilicon emitter bipolar transistors.

Post, I. R. C., Ashburn, P. and Wolstenholme, G. R. (1992) Polysilicon emitter bipolar transistors : a review and re-evaluation of theory and experiment.

Potts, A., Kelly, M. J., Hasko, D. G., Cleaver, J. R. A., Ahmed, H., Ritchie, D. A., Frost, J. E. F. and Jones, G. A. C. (1992) Lattice heating of freestanding ultra-fine GaAs wires by hot-electrons. Semiconductor Science and Technology, 7 (3B). B231-B234. ISSN 0268-1242

Potts, A., Singleton, J., Janssen, T. J. B. M., Kelly, M. J., Smith, C. G., Hasko, D. G., Peacock, D. C., Frost, J. E. F., Ritchie, D. A., Jones, G. A. C., Cleaver, J. R. A. and Ahmed, H. (1992) Thermal transport in free-standing GaAs wires in a high magnetic field.

R

Redman-White, W., Uren, M. J., Bunyan, R. J. T., Lee, M. and Alderman, J. C. (1992) Electrical and thermal feedbacks effects on the small signal-drain characteristics of partially depleted SOI MOSFETs. In: UNSPECIFIED.

Robbins, D. J., Leong, W. Y., Glasper, J. L., Pidduck, A. J., Jackson, R., Post, I. R. C., Shafi, Z. A. and Ashburn, P. (1992) Characterisation of heterojunction bipolar transistors incorporating Si'SiGe epitaxial double layers with n+ emitter implants.

S

Scharff, C., Carter, J. C. and Evans, A. G. R. (1992) New Fast MOSFETS parameter extraction method.

W

Wagner, M. and Mizuta, H. (1992) Effect of LO-phonon scattering on electrical bistability in resonant tunneling diodes. In: 1st International Workshop on Quantum Functional Devices, May 1992, Nasu Heights.

Williams, J. D. and Ashburn, P. (1992) Epitaxial growth of n+ and p+ polysilicon layers given single and double diffusions.

Y

Yazawa, Y., Mizuta, H., Fukatsu, S., Gossard, A. C. and Shiraki, Y. (1992) Optical properties of electric field controlled lateral superlattices. In: 2nd International Symposium on "New Phenomena in Mesoscopic Structures, December 1992, Kauai.

Z

Zammit, C. C., Sumner, T. J., Hepburn, I. D., Ade, P. A. R., Hutchin, P. and Ensell, G. (1992) The epitaxial Si bolometer: an alternative to ion implanted devices.

Zegadi, A., Tomlinson, R. D., Bagnall, D. M., Djamin, M., Slifkin, M. A., Hill, A. E. and Neumann, H. (1992) A photoacoustic study of CuInSe2 and CuIn x Ga1 Se2 Compunds.

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