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Items from Current ECS Groups > Nano Group in 1994
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Number of items: 36.

Ashburn, P., Nouailhat, A. and Chantre, A. (1994) Measurement of the bandgap narrowing in the base of Si homojunction and Si/SiGe heterojunction bipolar transistors from the temperature dependence of the collector current.

Ashburn, P., Nouailhat, A., Hashim, M. D. R., Parker, G. J., Mouis, M. and Robbins, D. J. (1994) Temperature dependence of the current gain of Si/SiGe for device applications.

Bonar, J. M., Parker, G. J., Hamel, J. S. and Ashburn, P. (1994) LPCVD growth of SiGe for device applications.

Bonar, J. M., Parker, G. J., Hamel, J. S. and Ashburn, P. (1994) LPCVD Growth of Silicon-Germanium for Device Applications.

Chen, W., Amaratunga, G. A. J., Narayanan, E. M. S., Humphry, J. and Evans, A. G. R. (1994) A CMOS compatible Lateral Emitter switched thyristor with enhanced turn-on capability.

Chen, W., Amaratunga, G. A. J., Narayanan, E. M. S., Humphry, J. and Evans, A. G. R. (1994) A CMOS compatible Lateral Emitter switched thyristor with enhanced.

Farooqui, M. M. and Evans, A. G. R. (1994) Solid and hollow micro and nano spherical structures in polysilicon and phosphosilicate glasses.

Giroult-Matlakowski, G., Bousetta, H., LeTron, B., Dutartre, D., Warren, P., Bouzid, M. J., Nouailhat, A., Ashburn, P. and Chantre, A. (1994) Low temperature performance of self-aligned,etched polysilicon emitter pseudo-HBTs.

Glover, M., Redman-White, W., Srodzinski, D., Dobbs, S., Stavely, P. and Fowers, P. (1994) An integrated CMOS DQPSK demodulator for NICAM data recovery. In: UNSPECIFIED.

Goodings, C. J., Mizuta, H., Cleaver, J. R. A. and Ahmed, H. (1994) Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates. Surface Science , 305 . pp. 363-368.

Goodings, C. J., Mizuta, H. and Cleaver, J. R. A. (1994) Electrical studies of charge build-up and phonon-assisted tunneling in double-barrier materials with very thick spacer layers. Journal of Applied Physics, 75 . pp. 2291-2293.

Goodings, C. J., Mizuta, H., Cleaver, J. R. A. and Ahmed, H. (1994) Variable-area resonant tunneling diodes using implanted in-plane gates. Journal of Applied Physics, 76 . pp. 1276-1286.

Goodings, C. J., Mizuta, H., Cleaver, J. R. A. and Ahmed, H. (1994) Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates. Surface Science, 305 . pp. 363-368.

Harris, R., Brunnschweiler, A. and Ensell, G. J. (1994) Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 120 kGy capability.

Harris, R., Brunnschweiler, A. and Ensell, G. J. (1994) Radiation hardness of a bonded silicon-vacuum-silicon field effect structure with 120KGy capability.

Ho, S., Moriyoshi, A., Ohbu, I., Kagaya, O., Mizuta, H. and Yamaguchi, K. (1994) Theoretical analysis of transconductance enhancement caused by electron-concentration- dependent screening in heavily doped systems. IEICE Trans. Electron, E77-C . pp. 155-160.

Ho, S., Oohira, M., Kagaya, O., Moriyoshi, A., Mizuta, H. and Yamaguchi, K. (1994) Dynamic simulation of multiple trapping processes and anomalous frequency dependence in GaAs MESFETs. IEICE Trans. Electron, E77-C . pp. 187-193.

Howes, R., Redman-White, Q., Nichols, K. G., Robinson, M., bird, S. and Mole, P. J. (1994) A silicon on sapphire MOSFET based on the calculation of surface potential. IEE Trans Computer Aided Design of Integrated Circuits, 13 (4). 494 - 506.

Lewis, C. P., Kraft, M. and Hesketh, T. G. (1994) The Development of a Digital Accelerometer. In: 27th ISATA, 1994, Aachen. pp. 873-879.

Marty, A., Nouailhat, A. and Ashburn, P. (1994) Theoretical and experimental study of high energy implanted collectors for bipolar transistors in BiCMOS technology.

Moiseiwitsch, N. E. and Ashburn, P. (1994) Interfacial oxide break-up in npn polysilicon emitter bipolar transistors by fluorine implantation.

Moisiewitsch, N. E. and Ashburn, P. (1994) The benefits of fluorine in pnp polysilicon emitter bipolar transistors.

Ohkura, Y., Mizuta, H., Ohbu, I., Kagaya, O., Katayama, K. and Ihara, S. (1994) The electron mobility transition in n-GaAs heavily doped channel. Semiconductor Science and Technology, 9 . pp. 811-814.

Parker, G. J. (1994) Introductory Semiconductor Device Physics.

Pember, A., Smith, J. G. and Kemhadjian, H. A. (1994) Long Term Stability of Silicon Bridge Oscillators Fabricated using Boron Etch Stop.

Pember, A., Smith, J. G. and Kemhadjian, H. A. (1994) Long Term Stability of Silicon Bridge Oscillators Fabricated using the Boron Etch Stop.

Post, I. R. C., Ashburn, P. and Nouailhat, A. (1994) An investigation of the inconsistency in barrier heights for pnp and npn polysilicon emitter bipolar transistors using a new tunneling model.

Redman-White, W., Bracey, M., Tijou, J., Murray, B. and Hopwood, C. (1994) An analogue CMOS front-end for a D2-MAC TV decoder. IEEE Journal of Solid State Circuits, 29 (4). 998 - 1001. ISSN 0018-9200

Redman-White, W. and Durham, A. M. (1994) An integrated fourth order converter with stable self-tuning continuous time noise shaper. IEE Proceedings on circuits, Devices and Systems, 141 (3). 145 - 150.

Routley, P., Brunnschweiler, A. and Ashburn, P. (1994) Optimisation of BiCMOS buffers for low voltage applications.

Siabi-Shahrivar, N., Redman-White, W., Ashburn, P. and Kemhadjian, H. A. (1994) Reduction of l/f noise in Polysilicon Emitter Bipolar Transistors.

Tryzna, M., Neuteboom, H., Nandra, N. and Redman-White, W. (1994) An 8-bit 3MS/s CMOS two-step flash converter for low voltagfe mixed signal CMOS integration. In: UNSPECIFIED.

Waite, A., Evans, A. G. R. and Afshar-Hanaii, N. (1994) Electrical stressing of submicrometer MOSFETS with raised source/drain structures realised by selective epitaxial growth of silicon using silane.

Waite, A. M., Evans, A. G. R. and Afshar-Hanaii, N. (1994) Electrical stressing of submicrometer MOSFETS with raised source/drain structures realised by selective epitaxial growth of silicon using silane.

Zegadi, , Bagnall, D. M., Hill, A. E., Slifkin, M. A., Neumann, H. and Tomlinson, R. D. (1994) Defect levels in CuInSe2 studied by photoacoustic spectroscopy.

Zhang, J. P., Wilson, R. J., Hemment, P. L. F., Claverie, A., Cristiano, F., Sallers, P., Wen, J. Q., Evans, J. H., Peaker, A. R. and Parker, G. J. (1994) Regrowth Behaviour of Si 1 - x Gex/Si Structures formed by Ge+ Ion-Implantation and Post Amorphisation.

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