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Items from Current ECS Groups > Nano Group in 1995
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Number of items: 42.

Bagnall, D. M., Ralston, A., O'Donnell, K. P., Smith, P. C., Wright, P. and Cockayne, B. (1995) Spectral and spatial resolution of photopumped II -VI single quantum well lasers.

Bagnall, D. M., Wright, P. J., Cockayne, B. and O'Donnell, K. P. (1995) Microspectroscopic studies of CdSe single quantum well lasers.

Bracey, M., Redman-White, W., Richardson, J. and Hughes, J. B. (1995) A 70MS/s 8-bit differential switched current CMOS A/D converter using parallel interleaved pipelines. In: UNSPECIFIED.

Camon, H. and Moktadir, Z. (1995) Atomic scale simulation of silicon etched in aqueous KOH solution. Sensors and Actuators A: Physical, 46 . pp. 27-29.

Camon, H., Rouhanie, M. D., Esteve, D., Gue, A. M. and Moktadir, Z. (1995) Atomic scale simulation of silicon anisotropic chemical etching. Microsystem Technologies, 1 . pp. 163-167.

Charlton, M. D. B. and Parker, G. J. (1995) Comparison of the Suitability of Silicon and Germanium as Materials for the Fabrication of a near Infrated Photonic Bandgap Crystal.

Ensell, G. J. (1995) Alignment of mask patterns to crystal orientation.

Ensell, G. J. (1995) Alignment of mask patterns to crystal orientation.

Ensell, G. J. (1995) Free standing silicon crystal microstructures.

Gregory, H. J., Ashburn, P., Kennedy, G. P. and Robbins, D. J. (1995) Electrical Characteristics of low thermal budget polysilicon emitters for Si/SiGe heterojunction bipolar transistors.

Haigh, D. G. and Redman-White, W. (1995) MOSFET Biasing Circuits. In: CRC Press, Baton Rouge, F1 USA.

Johnston, I. R. and Parker, G. J. (1995) A Silicon-Based Fabrication Process for the Production of Optical Waveguides.

Jones, C. L., Usher, A., Elliott, M., Herrenden-Harker, W. G., Potts, A., Shepherd, R., Cheng, T. S. and Foxon, C. T. (1995) The decay of induced eddy currents in a two-dimensional electron system. Solid State Communications, 95 (7). pp. 409-413. ISSN 0038-1098

Jones, C. L., Usher, A., Elliott, M., Herrenden-Harker, W. G., Potts, A., Shepherd, R., Cheng, T. S. and Foxon, C. T. (1995) Magnetisation measurements on two-dimensional electron systems in the magnetic quantum limit.

Lander, R. J. P., Emeleus, C. J., Parker, E. H. C., Whall, T. E., Kennedy, G. P., Sidek, R. and Evans, A. G. R. (1995) A study of Hall and field effect mobilities in a Si/Si0.8Ge0.2 p-channell MOS heterostructure.

Lau, H. W., Parker, G. J., Greef, R. and Holling, M. (1995) High aspect Ratio Sub-micron Pillars Fabricated by Photo Assisted Electrochemical Etching and Oxidation.

Lewis, C. P., Kraft, M. and Hesketh, T. G. (1995) Design and Development of a Digital Transducer. In: AEROTECH, 1995, Birmingham.

Lewis, C. P., Kraft, M. and Hesketh, T. G. (1995) Developments in Digital Transducers for Vehicle Control and Telemetric Instrumentation. In: 2nd IFAC Conference on Intelligent Auton. Vehicles, 1995, Helsinki. pp. 32-36.

Lewis, C. P., Kraft, M. and Hesketh, T. G. (1995) A Micromachined, Digital, Closed-loop Accelerometer. In: UNSPECIFIED. pp. 143-149.

Lewis, C. P., Kraft, M. and Hesketh, T. G. (1995) Characterisation and Modelling of a Micromachined Accelerometer. In: 12th International Conference on Systems Science, 1995, Wroclaw. pp. 143-149.

Marsh, C. D., Moiseiwitsch, N. E., Booker, G. R. and Ashburn, P. (1995) Expitaxial regrowth of As doped polysilicon at 850 Degrees C induced by fluorine and a pre-anneal.

Mizuta, H. (1995) Three-dimensional S-matrix simulation of single-electron resonant tunnelling through random ionised donor states. In: 4th International Workshop on Computational Electronics, November 1995, Tempe. p. 13.

Mizuta, H. and Tanoue, T. (1995) The Physics and Applications of Resonant Tunnelling Diodes; Cambridge Studies in Semiconductor Physics and Microelectronic Engineering 2. Cambridge Studies in Semiconductor Physics and Microelectronic Engineering 2 Cambridge University Press. ISBN 0-521-43218-9

Moiseiwitsch, N. E., Marsh, C., Ashburn, P. and Booker, G. R. (1995) Epitaxial regrowth of n+ polycrystalline silicon at 850 Deg C induced by fluorine implantation.

Mouis, M., Gregory, H. J., Denorme, S., Mathiot, D., Ashburn, P., Robbins, D. J. and Glasper, J. L. (1995) Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors.

Nakamura, T., Shiba, T., Onai, T., Uchino, T., Kiyota, Y., Washio, K. and Homma, N. (1995) Process and device technologies for high speed self-aligned bipolar transistors. IEICE Trans. Electron, E78-C . p. 1154.

O'Donnell, K. P., Bagnall, D. M., Wright, P. J. and Cockayne, B. (1995) Dark line defects, Bright line lasers - Microscopic studies of single shot lasing in CdSe.

Parker, G. J., Ashburn, P., Bonar, J. M., Gregory, H. J., Kennedy, G. P. and Hamel, J. S. (1995) LPCVD SiGe for Heterojunction Bipolar Transistors.

Parker, G. J. and Bonar, J. M. (1995) Selective low pressure chemical vapour deposition epitaxy using silance only for advanced device applications.

Pember, A., Smith, J. G. and Kemhadjian, H. A. (1995) Quantification and Cure of a Softening Non-Linearity in Resonating Cantilevers.

Pember, A., Smith, J. G. and Kemhadjian, H. A. (1995) Study of the effect of Boron Doping on the ageing of Silicon Micromachined Cantilevers.

Richardson, J., Hughes, J. B., Moulding, K., Bracey, M., Redman-White, W., Bennett, J. and Soin, R. S. (1995) An integrated design and synthesis system for high performance switched current analogue filters.

Roberts, S. W. and Parker, G. J. (1995) Erbium diffusion in silicon investigated using enclosed silicon cavities.

Roberts, S. W. and Parker, G. J. (1995) Strong room temperature photoluminescence from erbium-doped silicon monoxide.

Roberts, S. W., Parker, G. J. and Hempstead, M. (1995) The Photoluminescence of Erbium-Doped Silicon Monoxide.

Roberts, S. W., Parker, G. J. and Hempstead, M. (1995) The Photoluminescence of Erbium-Doped Silicon Monoxide.

Shafi, Z. A., Ashburn, P., Post, I. R. C., Robbins, D. J., Leong, W. Y., Gibbins, C. J. and Nigrin, S. (1995) Analysis and modelling of the base currents of Si/SiGe heterojunction bipolar transistors fabricated in high and low oxygen content material.

Siabi-Shahrivar, N., Redman-White, W., Ashburn, P. and Kemhadjian, H. A. (1995) Reduction of l/f noise in polysilicon emitter bipolar transistors.

Tenbroek, B. M., Redman-White, W., Lee, M. S. L. and Uren, M. J. (1995) Comparison of SOI MOSFET self-heating measurements by gate resistance thermometry and small-signal drain admittance extraction. In: UNSPECIFIED.

Tenbroek, B. M., Redman-White, W., Lee, M. S. L. and Uren, M. J. (1995) Experimental validation of simple electrothermal circuit models for SOI MOSFETs using direct DC-UHF measurement of drain admittance. In: UNSPECIFIED.

Uchino, T., Shiba, T., Kikuchi, T., Tamaki, Y., Watanabe, A. and Kiyota, Y. (1995) Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base. IEEE Trans. Electron Devices, 42 . p. 406.

Zhao, Z. G., Groot, C. H. d., Boer, F. R. d. and Buschow, K. H. J. (1995) Antiferromagnetic interactions in Nd6Fe12Ga2 based compounds. Physica B, 211 . p. 102.

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